Electronic device comprising hall effect region with three contacts

ABSTRACT

An electronic device is disclosed as a part of a magnetic field sensor or a mechanical stress sensor. The electronic device includes a Hall effect region, a first contact (temporarily functioning as a first supply contact), a second contact (second supply contact), and a third contact (temporarily functioning as a first sense contact) that are arranged in or on a surface of the Hall effect region. The first contact and the third contact are arranged in a substantially symmetrical manner to each other with respect to the second contact. An electrical current distribution within the Hall effect region is influenced by a physical quantity (e.g. magnetic field strength or mechanical stress) to be measured. A sense signal tapped at the third contact is a function of the current distribution, the sense signal thus being indicative of the physical quantity. A corresponding sensing method using the electronic device is also disclosed.

FIELD

Embodiments of the present invention relate to an electronic device andto a sensing method. In particular, the electronic device may be asensing device for sensing a physical quantity, such as a magnetic fieldor a mechanical stress within an object.

BACKGROUND

Electronic devices may be used to sense or measure physical quantities.In order to sense or measure the strength and direction of a magneticfield parallel to the surface of, e.g., a semiconductor die, verticalHall devices may be used. Most vertical Hall devices suffer from thefact that the spinning current method, that is used to cancel thezero-point error of the Hall devices, does not work very well. Withknown methods of the spinning current scheme it is possible to obtainresidual zero point errors of about 1 mT. A reason for this rather pooroffset behavior can be found in the asymmetry of the vertical Halldevice. Although it is known how to connect four vertical Hall devicesin order to improve the symmetry, the contact resistances still causeresidual asymmetries.

Another physical quantity that may be sensed or measured is mechanicalstress within an object such as a substrate, in particular asemiconductor substrate. To this end, an electronic device may be usedthat has a similar structure as a Hall device. Indeed, it may suffice toslightly modify some internal connections of a suitable Hall device inorder to obtain a mechanical stress sensor.

SUMMARY

Embodiments of the present invention provide an electronic devicecomprising a Hall effect region, a first contact arranged in or on asurface of the Hall effect region, a second contact arranged in or onthe surface of the Hall effect region, and a third contact arranged inor on the surface of the Hall effect region. The first contact isconfigured to function at least temporarily as a first supply contactfor the Hall effect region. The second contact is a second supplycontact for the Hall effect region. The third contact is configured tofunction at least temporarily as a sense contact. The first contact andthe third contact are arranged in a substantially symmetrical manner toeach other with respect to the second contact, and wherein an electricalcurrent distribution within the Hall effect region is influenced by aphysical quantity to be measured and wherein a sense signal tapped atthe third contact is a function of the current distribution, the sensesignal thus being indicative of the physical quantity.

Further embodiments of the present invention provide an electronicdevice comprising a Hall effect region, a first contact, a secondcontact, and a third contact. The first contact, the second contact, andthe third contact are arranged in or on a surface of the Hall effectregion. The first contact is configured to at least temporarily functionas a supply contact. The second contact is configured to function as afurther supply contact. The third contact is configured to at leasttemporarily function as a sense contact, the third contact being at afirst distance from the first contact and at a second distance from thesecond contact. A distance between the first contact and the secondcontact is smaller than a maximum of the first distance and the seconddistance. An electrical current distribution within the Hall effectregion is influenced by a physical quantity to be measured and wherein asense signal tapped at the third contact is a function of the currentdistribution, the sense signal thus being indicative of the physicalquantity.

Further embodiments of the present invention provide a sensing methodaccording to which an electric current is fed to a Hall effect regionvia a first contact arranged in or on a surface of a Hall effect regionand withdrawn from the Hall effect region via a second contact arrangedin or on the surface of the Hall effect region. The method alsocomprises sensing a sense signal at a third contact formed in or on thesurface of the Hall effect region, wherein the first contact and thethird contact are arranged in a substantially symmetrical manner to eachother with respect to the second contact. An electrical currentdistribution within the Hall effect region is influenced by a physicalquantity to be measured. A sense signal tapped at the third contact is afunction of the current distribution, the sense signal thus beingindicative of the physical quantity. The method further comprisesfeeding the electric current or a further electric current to the Halleffect region via the third contact and withdrawing the electric currentor the further electric current via the second contact, or vice versa(i.e., feeding the electric current via the second contact andwithdrawing via the third contact). The method further comprises sensinga further sense signal at the first contact and determining an outputsignal on the basis of the sense signal and the further sense signal.

Further embodiments of the present invention provide a sensing methodwhich comprises feeding an electric current to a Hall effect region viaa first contact arranged in or on a surface of a Hall effect region andwithdrawing the electric current from the Hall effect region via asecond contact arranged in or on the surface of the Hall effect region.The sensing method also comprises sensing a sense signal at a thirdcontact formed in or on the surface of the Hall effect region, whereinthe third contact is at a first distance from the first contact and at asecond distance from the second contact. A distance between the firstcontact and the second contact is smaller than a maximum of the firstdistance and the second distance. An electrical current distributionwithin the Hall effect region is influenced by a physical quantity to bemeasured and a sense signal tapped at the third contact is a function ofthe current distribution, the sense signal thus being indicative of thephysical quantity. The sensing method further comprises feeding theelectric current or a further electric current to the Hall effect regionvia the third contact and withdrawing the electric current or thefurther electric current via the second contact, or vice versa. Thesensing method further comprises sensing a further sense signal at thefirst contact and determining an output signal on the basis of the sensesignal and the further sense signal.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention are described herein, makingreference to the appended drawings.

FIG. 1A shows a schematic plan view of an electronic device and acorresponding cross section of the electronic device according to anembodiment of the teachings disclosed herein;

FIG. 1B graphically illustrates conditions for distances between threecontacts of the Hall effect region relevant to some embodiments of theteachings disclosed herein;

FIG. 2 illustrates how the electronic device shown in FIG. 1 can be usedin a spinning current scheme;

FIG. 3A shows a schematic plan view of an electronic device and acorresponding cross section of the electronic device according to anembodiment of the teachings disclosed herein during a first phase of ameasuring cycle;

FIG. 3B shows a schematic cross section through the electronic device ofFIG. 3A during a second phase of the measuring cycle;

FIG. 4A shows a schematic cross section through an electronic deviceaccording to another embodiment of the teachings disclosed herein duringa first phase of a measuring cycle;

FIG. 4B shows a schematic cross section of the electronic device shownin FIG. 4A during a second phase of the measuring cycle;

FIG. 5 shows a schematic cross section of an electronic device accordingto further a embodiment of the teachings disclosed herein;

FIG. 6A shows a graph illustrating in a cross-sectional view a simulatedelectrical potential within the two Hall effect regions of theelectronic device shown in FIG. 3A;

FIG. 6B shows a graph illustrating in a cross-sectional view simulatedcurrent stream lines within the two Hall effect regions of theelectronic device shown in FIG. 3A;

FIG. 7 shows a graph illustrating, for three different magnetic fieldvalues, the electrical potential at a surface of the two Hall effectregions of the electronic device according to the embodiment shown inFIG. 1A and corresponding to the cross-sectional view of the electricalpotential shown in FIG. 4A;

FIG. 8 shows a schematic view of an electronic device according to anembodiment where the ground potential serves as an interconnectionbetween two Hall effect regions;

FIG. 9A shows a schematic view of an electronic device according to anembodiment with four Hall effect regions, two of which are connected ina first series connection and the other two Hall effect regions beingconnected in a second series connection;

FIG. 9B shows a schematic view of an electronic device similar to theembodiment shown in FIG. 9A;

FIG. 10 shows a schematic view of an electronic device according toanother embodiment with four Hall effect regions;

FIG. 11 shows two schematic plan views of an electronic device accordingto a further embodiment of the teachings disclosed herein during a firstphase and a second phase of a measuring cycle, the electronic devicecomprising four Hall effect regions;

FIG. 12 shows a schematic plan view of an electronic device according toan embodiment with four Hall effect regions arranged along a line;

FIG. 13 shows a schematic plan view of an electronic device according toan embodiment with four Hall effect regions arranged in a quadrangle;

FIG. 14 shows a schematic plan view of an electronic device according toanother embodiment with four Hall effect regions arranged in aquadrangle;

FIG. 15 shows a schematic plan view of an electronic device according toan embodiment with four Hall effect regions arranged in a quadrangle andwith diagonal series connections;

FIG. 16 shows a schematic plan view of an electronic device according toa further embodiment with four Hall effect regions arranged in aquadrangle;

FIG. 17 shows a schematic plan view of an electronic device according toan embodiment with four Hall effect regions, two of which are connectedin a first series connection and are arranged at an angle of 90° to theother two Hall effect regions which are connected in a second seriesconnection;

FIG. 18 shows a schematic plan view of an electronic device according toan embodiment with four Hall effect regions similar to the embodimentshown in FIG. 17;

FIG. 19 shows a schematic plan view of an electronic device according toan embodiment, wherein each series connection comprises two Hall effectregions disposed at an angle of 90° to each other;

FIG. 20 shows a schematic plan view of an electronic device according toan embodiment similar to the embodiment shown in FIG. 19;

FIG. 21 shows a schematic plan view of an electronic device according toan embodiment comprising four Hall effect regions arranged in aquadrangle;

FIG. 22 shows a schematic plan view of an electronic device according toan embodiment similar to the one shown in FIG. 18;

FIG. 23 shows a schematic plan view of an electronic device according toan embodiment in which the Hall effect regions are L-shaped;

FIG. 24 shows a schematic plan view of an electronic device according toan embodiment in which the Hall effect regions are arc-shaped;

FIG. 25 shows a schematic flow diagram of a method for sensing aphysical quantity according to the teachings disclosed herein; and

FIG. 26 shows a schematic flow diagram of a method for sensing aphysical quantity according to another embodiment of the teachingsdisclosed herein.

Equal or equivalent elements or elements with equal or equivalentfunctionality are denoted in the following description by equal orsimilar reference signs.

DETAILED DESCRIPTION

In the following description, a plurality of details are set forth toprovide a more thorough explanation of embodiments of the teachingsdisclosed herein. However, it will be apparent to one skilled in the artthat embodiments of the teachings disclosed herein may be practicedwithout these specific details. Features of the different embodimentsdescribed hereinafter may be combined with each other, unlessspecifically noted otherwise. For the most part, the terms “Hall effectregion” and “tub” are used interchangeably herein. Accordingly, a Halleffect region may be a tub or well of a first conductivity type that isembedded in a substrate or a tub of opposite conductivity type. Thisstructure may cause an electrical isolation of the tub against thesubstrate in particular if the resulting pn-junction is reverse biased.However, it may also be possible that one tub comprises two or more Halleffect regions, in particular when two or more relatively distinctcurrent flows can be created within the Hall effect region (thuseffectively providing some sort of isolation of the two Hall effectregions).

When the electronic device comprises two or more Hall effect regions,these may be isolated from each other. The electrical isolation of twoHall effect regions against each other may take several forms. Accordingto a first form of isolation, the two or more Hall effect regions aredisjoined from each other, i.e., two adjacent Hall effect regions do notmerge at one or more locations but are separated by a material otherthan the Hall effect region material. As one possible option, the tubmay be isolated in a lateral direction by means of trenches that aretypically lined and/or filled with a thin oxide. As another option, thetub may be isolated towards the bottom by means of an SOI (silicon oninsulator) structure. Although the tub typically has a singleconductivity type it may be advantageous to configure the dopingconcentration in an inhomogeneous manner, i.e. spatially variable. Inthis manner a high concentration of the doping agent may occur in thearea of the contacts, as is usual with deep CMOS tub contacts. In thealternative, a layering of differently strongly doped layers may besought after, as is the case with e.g. a buried layer. Such a layeringmay result, to some extent, from technological reasons relative to otherelectronic structures that are formed within the substrate. The designof the electronic device, the Hall device, or the mechanical stresssensor then may need to be reconciled with these circumstances, eventhough the layering might, in fact, be unfavorable for the electronicdevice, the Hall device, or the mechanical stress sensor.

In one embodiment, the Hall effect region may be an n-dopedsemiconductor as this provides about a three times higher mobility andconsequently a higher Hall factor than with a p-doped semiconductor. Thedoping concentration in the functional part of the Hall effect region istypically in the range of 10¹⁵ cm⁻³ to 10¹⁷ cm⁻³, in one example.

Another possible material for the Hall effect regions is permalloy whichis a nickel-iron magnetic alloy, or a material similar to permalloy.Permalloy exhibits a low coercivity, near zero magnetostriction, highmagnetic permeability, and significant anisotropic magnetoresistance. Avariation of the electrical resistance of permalloy within a range ofapproximately 5% can typically be observed depending on the strength andthe direction of an applied magnetic field. This effect may be used in asimilar manner as the Hall effect occurring in a semiconductor forsensing and/or measuring a magnetic field, and is known in theliterature as anomalous Hall effect.

The teachings disclosed herein may be used in connection with a spinningcurrent principle, in which supply- and sense-terminals are exchanged inconsecutive clock phases/operating phases. Hence, the supply/sensecontacts are configured to alternately function as a momentary supplycontact and a momentary sense contact, i.e., to function as momentarysupply/sense contacts in an alternating manner. A sense terminal in avertical Hall device responds to an electric current passing by. Amagnetic field (parallel to the die surface and perpendicular to thecurrent streamlines) can efficiently lift up or pull down the potentialat the contact (which typically is at the surface of the die). The term“vertical Hall effect” or “vertical Hall device” may be thought of asbeing derived from the fact that the Hall effect in a vertical Halldevice acts in a vertical direction (if the surface of the substrate isassumed to be horizontal, per definition). Besides a classification ofHall devices in “horizontal Hall devices” and “vertical Hall devices”they may also be distinguished regarding the direction in which thecurrent flows in a region where it experiences the Hall effect. In aHall device using the “vertical current mode”, the electric currentsubstantially flows in a vertical direction with respect to the surface(which is assumed to be horizontal). In a Hall device using the“horizontal current mode”, the electric current substantially flows in ahorizontal direction, i.e., parallel to the (horizontal) substratesurface, at least in a region where the Hall effect acts on the electriccurrent and can be sensed.

The Hall effect regions are formed in an isolated manner from each other(for example in the same substrate, having an insulating structure or atleast a substantially current-free region between them, or in twodistinct substrates) but galvanically connected in a series connection.An electric current enters the series connection at a first supplycontact and leaves the series connection at a second supply contact.

In some configurations a conductive region, such as an n+ buried layer(nBL), may be present adjacent to a second surface of the Hall effectregions opposite to the first surface. According to the teachingsdisclosed herein, the contacts that are formed in the first surface(s)or on the first surface(s) of the Hall effect region(s) are electricallyseparated from the conductive region. In particular, no low-ohmicconnection, such as one or more n+ sinker(s), exists between one of theat least six contacts and the conductive region (e.g., the nBL). Rather,the contacts and the conductive region are separated by at least aportion of the relatively high-ohmic Hall effect region. In other words,an electrical connection between one of the at least six contacts andthe conductive region traverses the corresponding Hall effect region ora portion thereof (typically in a vertical direction).

FIG. 1A shows a schematic plan view and a schematic cross section of anelectronic device 10 according to an embodiment of the teachingsdisclosed herein. The electronic device 10 comprises a Hall effectregion 11 and three contacts 21, 22, 23 arranged at a surface of theHall effect region 11. A first contact 21 is configured to function, atleast temporarily, as a supply contact. Hence, an electrical current tobe fed to the Hall effect region 11 flows via the first contact 21 intothe Hall effect region 11. A second contact 22 is configured to functionas a further supply contact so that the electrical current leaves theHall effect region 11 via the second contact 22. Note that the directionof the electrical current may be inversed so that the electrical currentflows into the Hall effect region 11 via the further supply contact(second contact) 22 and leaves the same via the supply contact (firstcontact) 21. A third contact 23 is configured to function, at leasttemporarily, as a sense contact.

During an operation of the electronic device 10 the electrical currentflows from the first contact 21 to the second contact 22, or vice versa,and causes a current distribution within the Hall effect region 11. Thecurrent distribution may be influenced by a physical quantity, such as amagnetic field or a mechanical stress within the Hall effect region. Asense signal tapped at the third contact 23 is influenced by the varyingcurrent distribution and thus also by the physical quantity.

FIG. 1A shows the electronic device in a first possible configuration inwhich the first contact 21 is the supply contact and the third contact23 is the sense contact. In a second possible configuration the firstcontact 21 may function as a sense contact and the third contact 23 mayfunction as a supply contact. The first and second possibleconfigurations may be used in an alternating manner so that a spinningcurrent scheme is obtained.

The first contact 21 and the third contact 23 are arranged in asubstantially symmetrical manner to each other with respect to thesecond contact 22 (i.e., when taking the second contact 22 as a centerof symmetry). In other words, the second contact, that functions as thepermanent supply contact, is in the symmetry center of the first andthird contacts 21, 23, i.e., a corresponding symmetry axis extendsthrough the second contact 22 in the y-z-plane. The first contact 21 isat a first side of the symmetry axis and the third contact 23 is at anopposite second side of the symmetry axis.

In the embodiment shown in FIG. 1A the distance between the firstcontact 21 and the second contact 22 is substantially equal to thedistance between the second contact 22 and the third contact 23.Moreover, the distance between the supply contact 21 and the furthersupply contact 22 is smaller than the distance between the supplycontact 21 and the sense contact 23. The three contacts 21, 22, and 23need not be arranged along a straight line as illustrated in FIG. 1A,but may rather be arranged in many other ways, such as in a triangle oralong an arc.

The expression “substantially symmetrical” means that a dimension maydeviate from a perfectly symmetrical value within a tolerance range (forexample, due to manufacturing tolerances on the order of 1%, 5%, or 10%)and still be considered to be symmetrical. In general, the expression“substantially” used in various contexts herein shall be understood ascomprising a tolerance range around a crisp value.

FIG. 1B graphically illustrates the conditions for the first distanceand the second distance which are relevant for at least some embodimentsof the teachings disclosed herein. As a reminder, the first distance isthe distance between the first contact 21 and the third contact 23. Thesecond distance is the distance between the second contact 22 and thethird contact 23. The third contact 23 is the (momentary) sense contactand is farther away from at least one of the two supply contacts than adistance between the two supply contacts 21, 22. A circle around thefirst contact 21 having a radius R21 indicates a region in which thethird contact 23 would be closer to the first contact 21 than the secondcontact 22. Another circle around the second contact 22 having a radiusR22 indicates a region in which the third contact 23 would be closer tothe second contact 22 than the first contact 21. The condition for thedistances of the three contacts 21, 22, 23 is that the third contact 23is farther away from at least one of the first contact 21 and the secondcontact 22 than the distance between the first and second contacts 21,22. This condition is not met in the intersection of the two circleswith the radiuses R21 and R22.

The proposed arrangement of the two supply contacts being substantiallynext to each other, while the sense contact is arranged aside from thetwo supply contacts, is a departure from existing design principles forHall devices, where the sense contact(s) is/are typically arrangedbetween the two (or more) supply contacts. The teachings disclosedherein are based on the insight that the sense contact does not need tobe actually “between” the supply contacts (i.e., close to the shortestcurrent stream line between the two supply contacts), but that a usefulsense signal may also be obtained at a sense contact that is aside fromtwo supply contacts placed next to each other. This arrangement ofcontacts opens a new possibility to make a spinning current scheme withclock phases with much better symmetry than in the prior art, as will beexplained below.

In practice, the output signal of the electronic device 10 is typicallysubject to a relatively large zero point error. It is possible to swapfunctions of the first supply contact and the sense contact during asecond operating phase (clock phase). In theory, the zero point errorsobserved in both operating phases cancel each other out. However, thistypically does not work that well in practice, as a huge signal has tobe sampled during each operating phase of which only a small portioncontains the magnetic field information (only about 1/1000^(th)) so thatthe sample step does not work properly for small errors in the samplingprocess. Therefore at least two devices (and hence two Hall effectregions) are used in practice. In this manner the difference of bothsense signals of both Hall effect regions or wells may be evaluated peroperating phase and thus the huge common mode signal may becircumvented. This will be explained in connection with some of thefollowing figures, for example FIG. 10.

FIG. 2 shows the electronic device 10 during a first clock phase of aspinning current cycle and during a second clock phase of the spinningcurrent cycle. The electronic device 10 comprises the Hall effect region11 with three contacts 21, 22, 23, wherein the two outer contacts 21, 23are located symmetrically with respect to the middle contact 22. Themiddle contact 22 is a supply contact through which substantially theentire electrical current flows into or out of the Hall effect region11. The two other contacts 21, 23 are a momentary supply contact and amomentary sense contact, respectively, and are exchanged (regardingtheir functions) in different operating modes and/or clock cycles.Hence, the first contact 21 functions as a momentary sense contactduring the second clock phase and the third contact 23 functions as amomentary supply contact during the second clock phase.

The electronic device 10 shown in FIG. 2 may be operated by subtractingthe sense signals tapped or sampled at the momentary sense contactsduring the first and second clock phases in order to measure a magneticfield. The subtraction may be performed by means of a subtractionelement 9. In contrast, adding the two sense signals yields an outputsignal that is indicative of a mechanical stress within the Hall effectregion 11.

FIG. 3A shows a schematic plan view of an electronic device 10 accordingto an embodiment of the teachings disclosed herein and, below theschematic plan view, a schematic cross section of the same electronicdevice. The electronic device 10 comprises a first Hall effect region 11and a second Hall effect region 12. The Hall effect regions 11 and 12may be formed in a semiconductor substrate by locally doping thesemiconductor to obtain e.g. an n-type semiconductor material (an n-typesemiconductor has more electrons than holes). A momentary supply contact21 and a momentary sense contact 23 are formed on a surface of the firstHall effect region 11. A momentary supply contact 22 and a momentarysense contact 24 are also formed on a surface of the second Hall effectregion 12. The supply contacts 21, 22 and the sense contacts 23, 24 arespinning current contacts that are configured to function as supplycontacts during a first operating phase of a spinning current cycle andto function as sense contacts during a second operating phase of thespinning current cycle, or vice versa. The momentary supply contact 21and the momentary sense contact 23 at the first Hall effect region 11form a first pair of contacts. The momentary supply contact 22 and themomentary sense contact 24 at the second Hall effect region 12 form asecond pair of contacts. FIG. 3A depicts the electronic device 10 in aconfiguration corresponding to a first clock phase of the spinningcurrent cycle. An electrical current enters the first Hall effect region11 at the spinning current contact 21 (first momentary supply contact)and leaves the second Hall effect region 12 at the spinning currentcontact 22 (second momentary supply contact) that is, in the depictedconfiguration, connected to a ground potential. The two spinning currentcontacts 23 and 24 are configured to function as momentary sensecontacts during the first clock phase. In a second clock phase shown inFIG. 3B, the two spinning current contacts (former sense contacts) 23and 24 are configured to function as momentary supply contacts and theformer supply contacts 21 and 22 are configured to function as momentarysense contacts. It is typically advantageous to have a high degree ofsymmetry between contacts 21 and 23 as well as between contacts 22 and24.

The electronic device 10 shown in FIG. 3A further comprises twointerconnection contacts 32, 33. The interconnection contacts 32 and 33are electrically connected to each other by means of an electricallyconducting connection 42. The interconnection contacts are distinct fromthe spinning current contacts. In FIG. 3A, the interconnection contact32 is spatially located between the spinning current contacts 23 and 21,i.e., between the contacts of the first pair. The second interconnectioncontact 33 is spatially located between the spinning current contacts 24and 22 (between the second pair of contacts). During the first clockphase the electrical current input at the spinning current contact 21flows along a current path involving the first Hall effect region 11 andthe second Hall effect region 12 until it leaves the second Hall effectregion 12 at the spinning current contact 22. The first Hall effectregion 11 and the second Hall effect region 12 form a series connectionbetween the first momentary supply contact 21 and the second momentarysupply contact 22. Note that the first and second momentary sensecontacts 23 and 24 are typically connected to high-ohmic sense circuitryso that substantially no electrical current or only a negligibleelectrical current enters or leaves the two Hall effect regions 11, 12via the momentary sense contacts 23, 24. The conducting path for theelectrical current is indicated in the schematic cross section of FIG.3A. The conducting path leads from the supply contact 21 to the left anda portion of the electrical current passes beneath (and possibly partlythrough) the first momentary sense contact 23. The conducting pathcontinues via the interconnection contacts 32 and 33 and the connection42 to the second Hall effect region 12. Within the second Hall effectregion 12 a portion of the electrical current flows directly to theright in the direction of the second momentary supply contact 22.However, another portion of the electrical current first flows to theleft, passes beneath (and possibly partly through) the second momentarysense contact 24, turns around to flow to the right and leaves thesecond Hall effect region 12 via the second momentary supply contact 22.

As mentioned above, the electrical current flows through two Hall effectregions 11, 12 which are connected in series via the connection 42. Inthis manner, two devices can be operated using the same electricalcurrent, which increases the signal-to-noise (SNR) ratio at fixedcurrent consumption. At first glance, one could think about designing asingle device having a doubled interior resistance. While this isbasically true, it is typically not that easy to achieve (maybe evenclose to impossible) when a vertical Hall probe is involved, because thedepth of the well would have to be scaled which might not always bepossible due to manufacturing process-related reasons.

The connection 42 may be or comprise a wire, a conductive trace, a stripline, an electronic device such as a conducting MOS transistor (MOS:metal-oxide-semiconductor), a resistor, a diode, a more complex circuit(e.g. a controlled current source) or another means for conducting anelectrical current from the first Hall effect region to the second Halleffect region. Other connections between two or more Hall effect regionswhich will be described below may also be or comprise a wire, aconductive trace, a strip line, an electronic device such as atransistor, or another means for conducting electrical current.

The interconnection contacts 32, 33 may be relatively large in order tomake the connection relatively low-ohmic and to reduce the voltage dropacross the interconnection contacts 32, 33. At least one of theinterconnection contacts 32, 33 may have a large effective surface for alow-ohmic connection between the interconnection contact and thecorresponding Hall effect region.

The first momentary supply contact 21 at which the electrical currententers the Hall effect regions 11, 12 is provided at the first Halleffect region 11, while the second momentary supply contact at which theelectrical current leaves the Hall effect regions 11, 12 is provided atthe second Hall effect region 12. The direction in which the currentflows through the semiconductor Hall effect device regions 11, 12, whereit enters, and where it leaves the electronic device is basically adesign option and may be modified. Moreover, the direction of thecurrent could be inversed, e.g. during an optional third operating phaseand an optional fourth operating phase of the spinning current scheme.As can be seen in the schematic cross-sectional view of FIG. 3A, theelectrical current passes in opposite directions beneath the momentarysense contacts 23 and 24 of the first and second Hall effect regions,respectively, so that, due to the Hall effect, the electrical potentialat one of the momentary sense contacts increases as a result of amagnetic field being present, while the electrical potential at theother momentary sense contact decreases. However, the two sense contactsare at different common mode potentials. This means that (even) withouta magnetic field being present, the electrical potentials at themomentary sense contacts 23 and 24 are generally not equal. Theelectrical potential at the first momentary sense contact 23 is closerto an electrical potential of a positive pole of the power supply (whichis connected to the supply contact 21), whereas the electrical potentialat the second momentary sense contact 24 is closer to the groundpotential (which is connected to the supply contact 22).

The first and the second Hall effect regions 11, 12 may be symmetricalwith respect to a symmetry axis or a symmetry plane. The twointerconnection contacts 32, 33 may be symmetrical with respect to thesymmetry axis or the symmetry plane, as well. In FIG. 3A for example, afirst symmetry axis or a symmetry plane for the electronic device may belocated between the first Hall effect region 11 and the second Halleffect region 12 in the y-z-plane, and a second symmetry axis orsymmetry plane for only the first Hall effect region 11 may be locatedat the interconnection contact 32 in the y-z-plane. The electronicdevice 10 may further have a symmetry plane in the x-y-plane. Withrespect to the symmetry of the electronic device 10, it should be notedthat it may typically not be necessary to distinguish between supplycontacts and sense contacts, as these typically are only temporaryfunctions of the corresponding spinning current contacts.

As can be seen in FIG. 3A and some of the subsequent figures, the firstand second Hall effect regions 11, 12 may be disposed or arranged alonga line. The line may extend along the longitudinal axis of the first andsecond Hall effect regions 11, 12 so that the longitudinal axessubstantially coincide. The first and second semiconductor Hall effectdevices are in this case longitudinally offset. Hence, the first end ofthe first Hall effect region 11 and the second end of the second Halleffect region 12 are exterior ends and the second end of the first Halleffect region 11 and the first end of the second Hall effect region 12are interior ends with respect to the electronic device structure.

Some electronic devices, in particular Hall devices, that are notcovered by the teachings disclosed herein use an arrangement withsimilar Hall devices, yet different connection and operation of the Halldevices. Such a device consists of a Hall effect region with fourcontacts. Two non-neighboring contacts are used as supply terminals andthe other two are used as sense terminals in a first clock phase. In asecond clock phase they are exchanged. Such a device not covered by theteachings disclosed herein typically lacks symmetry and therefore thevoltage between both sense terminals has a huge value even at avanishing magnetic field (i.e., huge offset error). Although in thesecond clock phase the offset has a different sign, it does not cancelin practice due to the non-linearity of the device.

According to the teachings disclosed herein, a twin-tub, three contactvertical Hall device is disclosed. More particularly, the vertical Halldevice comprises three contacts per tub. Two tubs or Hall effect regionsare connected by one wire or, more generally, by one electricallyconductive connection. When considering the first clock phase of thespinning current scheme each tub has three contacts, namely one supplycontact, one sense contact and one contact connected to the wire or theconnection. The supply contact of the first tub is connected to thepositive supply contact while the supply contact of the second tub isconnected to the negative supply contact. Thus the electrical currententers the first tub 11 through the supply contact 21 of the first tub,then it flows through the first tub 11 into the (inter)connectioncontact 33, which establishes contact between the first tub 11 and theconnecting wire 42. Then it flows through the wire 42 into the secondtub 12, where it flows through the tub 12 into the negative supplycontact 22 of the second tub. By flowing through the first and secondtubs the current establishes a potential distribution in the tub(s) 11,12. This potential distribution is mainly determined by the amount ofelectrical current that flows through the tub and by the conductivity ofthe tub. This conductivity may be a scalar, yet usually it is a secondrank tensor that has different values of conductivity in differentdirections. In the presence of magnetic fields the conductivity tensorhas some small magneto-conductive parts, which describemagneto-resistive effects and the Hall effect. The latter comprises theinfluence of the Lorentz force established by the magnetic field on themoving charges constituting the electrical current flow. Conversely, inthe presence of mechanical stress, the conductivity tensor has somesmall piezo-resistive parts.

Another way to describe the electronic device 10 depicted in FIG. 3A isnow presented. The electronic device 10 comprises a first Hall effectregion 11 and a first group of three contacts 21, 32, 23 arranged in oron a surface of the first Hall effect region 11. The first group ofthree contacts 21, 32, 23 are arranged along a line so that the firstgroup comprises two exterior contacts 21, 23 and one interior contact32. The two exterior contacts 21, 23 are configured to function as amomentary supply contact and a momentary sense contact in an alternatingmanner. The electronic device 10 further comprises a second Hall effectregion 12 and a second group of three contacts 24, 33, 22 arranged in oron a surface of the second Hall effect region 12. The second group ofcontacts 24, 33, 22 are arranged along a line so that the second groupcomprises two exterior contacts 24, 22 and one interior contact 33. Thetwo exterior contacts 24, 22 are configured to function as a momentarysupply contact and a momentary sense contact in an alternating manner.The interior contact 32 of the first group is connected to the interiorcontact 33 of the second group so that the first Hall effect region 11and the second Hall effect region 12 are connected in series withrespect to the first momentary supply contact 21 and the secondmomentary supply contact 22.

FIG. 3B shows a schematic cross section of the electronic device 10 ofFIG. 3A during a second clock phase of the measuring cycle, e.g., aspinning current cycle. The former supply contacts 21, 22 function asmomentary sense contacts during the second clock phase. In turn, theformer sense contacts 23, 24 function as momentary supply contactsduring the second clock phase. The former supply contact 21 and theformer sense contact 23 of the first Hall effect region 11 form a firstpair of contacts that alternate with respect to their functions assupply contact and sense contact. Regarding the second Hall effectregion 12, the former supply contact 22 and the former sense contact 24form a second pair of contacts that alternate with respect to thefunction as momentary supply contact and momentary sense contact in thecourse of one measurement cycle. It can be seen in FIG. 3B that duringthe second clock phase the electrical current flows from the momentarysupply contact 23 to the interconnection contact 32, wherein one portionflows relatively directly from left to right and another portion flowsalong a relatively large loop passing beneath (and possibly partlythrough) the momentary sense contact 21 in the first Hall effect region11. In the second Hall effect region 12 the electrical current flowsmostly from right to left between the interconnection contact 33 and themomentary supply contact 24. A portion of the electrical current flowsalong a loop which passes beneath (and possibly partly through) themomentary sense contact 22 to the momentary supply contact 24.

As can be seen in FIGS. 3A and 3B the teachings disclosed herein can beenhanced with the implementation of a spinning current technique. In afirst operating phase the contacts are configured as shown in FIG. 3A.In a second operating phase the role of supply and sense terminals isexchanged or swapped. The sensed signals in both operating phases areadded or subtracted (depending on if a measurement of magnetic fieldsvia the Hall effect is to be implemented or a measurement of mechanicalstress via the so-called Kanda effect). In accordance with the spinningcurrent technique all supply contacts of the first operating phase areused as sense contacts in the second operating phase and vice versa.This typically guarantees good performance for spinning currenttechniques.

In the electronic device 10 shown in FIGS. 3A and 3B according to theteachings disclosed herein, two separate Hall effect regions (or Halltubs) are connected with a wire (more generally, an electricallyconducting connection) through which flows the complete supply currentof the electronic device 10 (neglecting possibly leak currents). Eachtub has one supply contact and one sense contact.

FIGS. 4A and 4B show schematic cross sections of an electronic device 10according to another embodiment of the teachings disclosed herein in itsconfiguration during the first clock phase (FIG. 4A) and the secondclock phase (FIG. 4B) of the measurement cycle. The electronic device 10according to the embodiment shown in FIGS. 4A and 4B differs from theembodiment shown in FIGS. 3A and 3B in that the contacts 21, 23 of thefirst pair of contacts and the contacts 22, 24 of the second pair ofcontacts extend to the left or right ends of the first Hall effectregion 11 or the second Hall effect region 12, respectively. In thismanner, a contact resistance of the contacts 21 to 24 may be reduced.

FIG. 5 shows a schematic cross section of an electronic device 10according to a further embodiment of the teachings disclosed herein. Theembodiment shown in FIG. 5 is similar to the embodiment shown in FIGS.4A and 4B. In addition to what is shown in FIG. 2A, the electronicdevice 10 according to the embodiment shown in FIG. 5 further comprisesa second connection 41, which connects a further interconnection contact31 arranged in or on the surface of the first Hall effect region 11 anda further interconnection contact 34 arranged in or on the surface ofthe second Hall effect region 12. The connection 42 and the furtherconnection 41 are substantially parallel to each other in an electricalsense, with the exception that they are connected to different locationsin or on the surface of first and second Hall effect regions 11, 12. Theinterconnection contact 32 and the further interconnection contact 31are spatially arranged between the first pair of contacts 21, 23 at thesurface of the first Hall effect region 11. The interconnection contact33 and the further interconnection contact 34 are spatially arrangedbetween the second pair of contacts 22, 24 at the surface of the secondHall effect region 12. Note that the two connections 41, 42 may still beregarded as a single connection between the first Hall effect region 11and the second Hall effect region 12 because they both connect the samesub-portion of the first Hall effect region 11 with the same sub-portionof the second Hall effect region 12. Said sub-portion of the first Halleffect region 11 is located between the contacts 21, 23 of the firstpair of contacts. The sub-portion of the second Hall effect region 12 islocated between the contacts 22, 24 of the second pair of contacts. As afurther option, the two connections 41, 42 may be electricallyinterconnected to each other so that the four sub-portions of the firstand second Hall effect regions 11, 12 are connected.

FIGS. 6A and 6B illustrate some results of a numerical simulation of theelectronic device according to the teachings disclosed herein. For thepurpose of the simulation it has been assumed that an electrical voltageof 1V is applied between the first momentary supply contact 21 and thesecond momentary supply contact 22. Furthermore, a magnetic fieldstrength of 1 Tesla in the z-direction has been assumed. An electricalpotential within the first Hall effect region 11 and the second Halleffect region 12 is represented in FIG. 6A by areas of differenthatchings (see legend at the right of FIG. 6A). The electrical potentialis expressed in Volt (V). Another physical quantity that is illustratedin FIG. 6B is the total current density in A/m² in the form ofstreamlines. For the sake of the simulation it has been assumed that ahighly conductive layer 71 is adjacent to the first Hall effect region11 at a surface that is opposite to the surface at which the contacts21, 23, and 32 are arranged. A second highly conductive layer 72 isarranged adjacent to the second Hall effect region 12 at a surfaceopposite to the surface where the contacts 22, 24, and 33 are arranged.However, the highly conductive layers 71, 72 are optional andembodiments of the teachings disclosed herein exist that have no highlyconductive layer.

In particular, FIGS. 6A and 6B show the cross section of the two Halleffect regions or “tubs” 11, 12 which are connected by one wire 42 toform one device 10. The vertical axis with respect to the illustrationof FIGS. 6A and 6B is the y-axis and its scale is given at the left handside of the figure. The height y=0 marks the surface of thesemiconductor die where the contacts 21, 23, 32, 22, 24, and 33 arelocated. The contacts are marked by thick black lines.

If a magnetic field parallel to the z-direction is present, it changesthe electrical potential of the momentary sense contacts 23, 24 of bothtubs 11, 12. The sense contacts 23, 24 are the ones that are illustratedas floating in FIG. 6A (i.e., they are not connected neither to positiveor negative supply, respectively, nor to the connecting wire 42). FIG.6B shows the current streamlines. In the plot illustrated in FIGS. 6Aand 6B, a highly conductive bottom (i.e. the highly conductive layers71, 72) of both tubs 11, 12 is assumed. This highly conductive bottom istypically an n-buried layer 71, 72. The tubs 11, 12 are usually lightlyn-doped with 10¹⁵ to 10¹⁷ dopants per cm³ (phosphorous or arsenic insilicon technology). Yet, the n-buried layer is not necessary for theinvention. The n-buried layer may be present or not, depending on thetechnology that is used. A relatively high current density can beobserved in the first Hall effect region 11 beneath the momentary sensecontact 23. Furthermore, a relatively high current density in thevertical direction can also be observed at the left side and the rightside of the Hall effect region 11. In a similar manner, a relativelyhigh current density can be observed in the second Hall effect region 12beneath the momentary sense contact 24 and also at the left end and theright end of the second Hall effect region 12. A magnetic field in thez-direction or mechanical stress within the first Hall effect regionand/or the second Hall effect region 12 influences the electricalcurrent distribution. A variation of the electrical current distributioncauses a variation of the electrical potential at the momentary sensecontacts 23, 24. Thus, the electrical potential at the momentary sensecontacts 23, 24 is a function of the physical quantity (e.g., magneticfield strength or mechanical stress) to be measured. Note that FIGS. 6A,6B show a configuration of the electronic device 10 that is designed tomeasure the magnetic field strength and to cancel out, as far aspossible, any influence of the mechanical stress within the first Halleffect region 11 and the second Hall effect region 12.

For the simulation, the results of which are shown in FIGS. 6A, 6B, anelectronic device 10 with the following dimensions has been used. Awidth of the electronic device 10 in the direction perpendicular to thedrawing plane of FIGS. 6A, 6B is 3 μm. A height h is 5.5 μm and a lengthof the Hall effect region I_(r) is 14.5 μm. Each of the electrodes 21 to24, 32, and 33 has a length I_(e) in the x-direction of 1.5 μm. Adistance between the exterior electrodes 21 to 24 and a correspondingend of the Hall effect regions 11, 12 is designated as a margin lengthI_(m) and is 2.5 μm. These dimensions may vary for example within arange of +/−50% or 25% of the corresponding above mentioned value.Notwithstanding the indicated values of the various dimensions of theHall effect regions, the dimension may be subject to ample variations.For example, depending on the manufacturing technology Hall effectregions as thick as 100 μm may be possible. In this case also the otherdimensions would vary significantly. Therefore, the mentioned dimensionsshall be regarded as one possible example among a virtually infinitenumber of variants.

FIG. 7 illustrates the electrical potential along the surface (i.e. aty=0 and versus x=−2*10⁻⁵ m . . . +2*10⁵ m), where the full stroke linecorresponds to a vanishing magnetic field, the dotted line correspondsto a magnetic field with Bz=+1 T, and the dashed line corresponds to amagnetic field with Bz=−1 T. It can be seen that the positive supplycontact is at +1V, that the negative supply contact is at 0V, and thatthe interconnection contacts 32, 33 are at approximately 0.5V. The sensecontact 23 of the left tub or the first Hall effect region 11 is nearx=−10⁻⁵ m and at a potential of about 0.68V at 0 field (full strokeline). The sense contact 24 of the right tub or the second Hall effectregion 12 is near x=10⁻⁵ m and at an electrical potential of about 0.32Vat 0 magnetic field. Hence, the electrical potential at both sensecontacts 23, 24 are not equal at 0 magnetic field and accordingly theyare said to have different common modes.

At a positive Bz-field the potential at the left sense contact 23 israised while the potential at the right sense contact 24 is lowered. Byexchanging the sense contact 24 and the supply contact 22 of the secondHall effect region 12, the electrical potential at the (new) sensecontact 22 in the second Hall effect region 12 would also rise at apositive magnetic field.

Since the electrical supply current flows through both Hall effectregions 11, 12, it is used twice, which makes the electronic device 10economical. It uses only a little electrical current to generate twosense signals. The voltage between the sense contacts 23 and 24 variesfrom approximately 0.32V for a magnetic field of −1 T to approximately0.4V for a magnetic field of +1 T. The voltage corresponding to a zeromagnetic field is approximately 0.36V.

In practice it may be difficult to evaluate the sensed signals, sincethey are on top of large common voltages. A second electronic device ofsimilar construction may be used which also has a left and a right tub(referred to as third Hall effect region 13 and fourth Hall effectregion 14) with a sense contact in the left tub 13 and a sense contactin the right tub 14.

FIG. 8 shows schematically an electronic device 10 according to afurther embodiment of the teachings disclosed herein. The electronicdevice 10 is shown in a configuration of a first clock phase (left) of aspinning current cycle and in a configuration of a second clock phase(right) of the spinning current cycle. The electronic device 10comprises a first Hall effect region 11 and a second Hall effect region12. The first Hall effect region 11 has three contacts 21, 22, 23. Themiddle contact 22 and the right contact 21 are configured to function assupply contacts during the first clock phase. The left contact 23 isconfigured to function as a momentary sense contact during the firstclock phase. The second Hall effect region 12 also has three contacts51, 52, and 24. The left contact 51 and the middle contact 52 areconfigured to function as supply contacts during the first clock phase.The right contact 24 is configured to function as a sense contact duringthe first clock phase. A differential sense signal may be measuredbetween the momentary sense contacts 23 and 24.

During the second clock phase the electrical current is supplied to thefirst Hall effect region 11 via the third contact 23 and leaves thefirst Hall effect region 11 via the second contact 22. The electricalcurrent supplied to the second Hall effect region 12 enters the same viathe third contact 24 and leaves the second Hall effect region 12 via thesecond contact 52.

According to the embodiment shown in FIG. 8, the two Hall effect regions11 and 12 are connected to each other via the ground potential. Thismeans that the node, to which the interconnection contacts 22 and 52 areconnected, typically is not electrically isolated against other circuitparts, but is contacted by a large number of other circuit components,as it is the reference potential.

FIG. 9A shows a schematic circuit diagram of an electronic device 100according to a further embodiment of the teachings disclosed herein thatcomprises two substantially similar electronic devices 10-1, 10-2 asshown in FIGS. 3A and 3B. Accordingly, the electronic device shown inFIG. 9A comprises a third Hall effect region 13 and a fourth Hall effectregion 14. A third pair of contacts 25, 27 in or on the surface of thethird Hall effect region 13 comprises the momentary supply contact 25and the momentary sense contact 27 for the first operation phase of ameasurement cycle (the electronic device 100 is depicted in theconfiguration of the first operation phase in FIG. 9A). A firstinterconnection contact 36 is also arranged in or on the surface of thethird Hall effect region 13. A fourth pair of contacts 26, 28 comprisinga momentary supply contact 26 and a momentary sense contact 28 isarranged in or on the surface of the fourth Hall effect region 14. Afourth interconnection contact 37 is also arranged in or on the surfaceof the fourth Hall effect region 14. The third interconnection contact36 and the fourth interconnection contact 37 are connected to each otherby means of a connection 44.

In the embodiment shown in FIG. 9A, the four Hall effect regions 11, 12,13, and 14 are substantially identical. However, in alternativeembodiments, the first Hall effect region 11 and the third Hall effectregion 13 may be substantially identical to each other, while the secondHall effect region 12 and the fourth Hall effect region 14 may besubstantially identical to each other, but not to the first and thirdHall effect regions 11, 13.

A positive terminal of a voltage supply 81 is connected to the firstmomentary supply contact 21 and the third momentary supply contact 25. Anegative terminal of the voltage supply 81 is connected to the secondsupply contact 22 and the fourth supply contact 26. The first momentarysupply contact 21 is located at a right end of the first Hall effectregion 11, whereas the third momentary supply contact 25 of the thirdHall effect region 13 is located at a left end of the third Hall effectregion 13, i.e., at a corresponding opposite end of the third Halleffect region 13. The second momentary supply contact 22 and the fourthmomentary supply contact 26 are also located at corresponding oppositeends of the second Hall effect region 12 and the fourth Hall effectregion 14.

The first momentary sense contact 23 is connected to a negative inputterminal of an amplifier 61, such as an instrumentation amplifier. Thethird momentary sense contact 27 located in or at the surface of thethird Hall effect region 13 is connected to a positive input terminal ofthe first amplifier 61. The second momentary sense contact 24 of thesecond Hall effect region 12 is connected to a negative input terminalof a second amplifier 63, and the fourth momentary sense contact 28 ofthe fourth Hall effect region 14 is connected to a positive inputterminal of the second amplifier 63. The second amplifier 63 may also bean instrumentation amplifier. An output of the first amplifier 61 and anoutput of the second amplifier 63 are connected to a subtraction circuit68 that provides an output signal of the electronic device 100, theoutput signal being indicative of the magnetic field strength.

The first amplifier 61 functions as a first differential signalamplifier configured to provide a first differential signal on the basisof a first sense signal (i.e., the sense signal tapped at the momentaryfirst sense contact 23) and a third sense signal (i.e. the sense signaltapped at the momentary third sense contact 27). The first differentialsignal is proportional to −2B, where B is the magnetic field strength inthe z-direction. The second amplifier 63 functions as a seconddifferential signal amplifier configured to provide a seconddifferential signal on the basis of a second sense signal and a fourthsense signal, the second differential signal being proportional to +2B.The second sense signal is tapped at the second momentary sense contact24 and the fourth sense signal is tapped at the fourth momentary sensecontact 28. Hence, the output signal provided by the subtraction circuit68 is proportional to +4B.

When comparing the first Hall effect region 11 and the third Hall effectregion 13 it can be seen that the momentary sense contacts 23, 27 andthe momentary supply contacts 21, 25 are substantially “mirrored”.Furthermore, the two momentary supply contacts 21, 25 are both connectedto the positive terminal of the voltage supply 81 so that, due to thesubstantially symmetric structure of the first and third Hall effectregions 11, 13, the two momentary sense contacts 23, 27 areapproximately at the same common mode potential. This means that anelectrical potential difference between the negative input terminal andthe positive input terminal of the amplifier 61 is primarily influencedby the physical quantity to be measured, e.g. the magnetic field in thez-direction. The magnetic field in the z-direction causes the electricalpotential difference between the first momentary sense contact 23 andthe second momentary sense contact 27 because in the first Hall effectregion 11 the electrical current flows from the rightmost contact 21 tothe center contact 32, whereas in the third Hall effect region 13 theelectrical current flows from the leftmost contact 25 to the centercontact 36. In other words, the electrical currents in the first andthird Hall effect regions 11, 13 flow in opposite directions, at leastin the x-direction.

The second momentary sense contact 24 and the fourth momentary sensecontact 28 are also substantially at the same common mode potential andthe electrical currents in the second Hall effect region 12 and thefourth Hall effect region 14 flow substantially in opposite directions,at least in the x-direction.

In other words, the schematic circuit diagram shown in FIG. 9A may besummarized as follows. If the supply contact of the third Hall effectregion 13 (i.e., the left tub of the second device) is connected to thepositive supply potential of the voltage source 81, the common modepotentials of the sense contacts 23, 27 of the left tubs 11, 13 of bothdevices 10-1, 10-2 are equal (or at least very similar in view of smallunavoidable mismatches). The differential output signal may therefore beprocessed, which is the difference of the signals tapped at these twocontacts 23, 27. Analogously, the difference of the output signalstapped at the sense contacts 24, 28 of the right tubs 12, 14 of bothdevices may be processed. Thus, the circuit schematically illustrated inFIG. 9A is configured to detect a Bz-field (=magnetic fieldperpendicular to the drawing plane).

FIG. 9B shows another embodiment of an electronic device 100 accordingto the teachings disclosed herein which is similar to the embodimentshown in FIG. 9A. The first amplifier 61 is connected to the first andsecond momentary sense contacts 23, 24. The second amplifier 63 isconnected to the third and fourth momentary sense contacts 27, 28.

The electrical potentials at the first momentary sense contact 23 andthe fourth momentary sense contact 28 are proportional to +B. Theelectrical potentials at the second momentary sense contact 24 and thethird momentary sense contact 27 are proportional to −B. The negativeinput terminal of the first amplifier 61 is connected to the firstmomentary sense contact 23 and the positive input terminal of theamplifier 61 is connected to the third momentary sense contact 27.Therefore, an output of the amplifier 61 is proportional to −2B. Withrespect to the second amplifier 63, a negative input terminal isconnected to the second momentary sense contact 24 and a positive inputterminal is connected to the fourth momentary sense contact 28.Accordingly, the output of the amplifier 63 is proportional to +2B.After subtracting the output of the first amplifier 61 from the outputof the second amplifier 63, an output signal proportional to +4B isobtained at the output of the subtraction circuit 68.

In the configuration shown in FIG. 9B, the amplifiers 61, 63 aretypically amplifiers that are capable of amplifying relatively largedifferential voltages at the amplifier input(s). For example, theamplifiers 61, 63 should typically be capable of amplifying adifferential voltage of approximately 100 mV in a substantially perfectlinear manner.

When comparing the embodiments shown in FIGS. 9A and 9B, it can beobserved that in FIG. 9A the order of the subtractions that areperformed is (P₂₇−P₂₃)−(P₂₈−P₂₄), where P_(x) stands for the electricalpotential at the contact with reference numeral x. In contrast, theorder of the subtractions performed in the embodiment of FIG. 9B is(P₂₄−P₂₃)−(P₂₈−P₂₇). Resolving the brackets reveals that bothexpressions are identical and yield P₂₇−P₂₃−P₂₈+P₂₄. The difference isthat with the embodiment according to FIG. 9A the terms within thebrackets are identical or close to zero for a zero magnetic field,whereas for the FIG. 9B embodiment both bracket terms have a relativelylarge non-zero value at zero magnetic field, e.g. 0.3V and cancel outonly when subtracting the second bracket (P₂₈−P₂₇) term from the firstbracket term (P₂₄−P₂₃).

FIG. 10 shows a schematic circuit diagram of an electronic device 100configured to measure mechanical stress within the electronic device, inparticular in the four Hall effect regions 11 to 14. Note that in thefirst Hall effect region 11 and the second Hall effect region 12 themomentary sense contacts 23, 24 are both located at the left end of thecorresponding Hall effect region, 11, 12, respectively. Furthermore, themomentary supply contacts 21, 22 are both located at the correspondingright end of the Hall effect regions 11, 12. Regarding the third Halleffect region 13 and the fourth Hall effect region 14, the momentarysupply contacts 25, 26 are located at the corresponding left end of thethird Hall effect region 12 and the fourth Hall effect region 14,respectively. The momentary sense contacts 27, 28 are both located atthe corresponding right ends of the Hall effect regions 13, 14,respectively. The negative input terminal and the positive inputterminal of an amplifier 71 are connected to the momentary sensecontacts 23, 27. The momentary sense contacts 24, 28 of the second Halleffect region 12 and the fourth Hall effect region 14 are connected to asecond amplifier 73. The outputs of the first amplifier 71 and thesecond amplifier 73 are provided to an addition circuit 78. An output ofthe addition circuit 78 indicates a mechanical stress within theelectronic device 100. The influence of the magnetic field on the outputof the addition circuit 78 is substantially canceled out because theoutput of the first amplifier 61 is proportional to −2B and the outputof the second amplifier 63 is proportional to +2B.

In FIGS. 9A, 9B, and 10, a voltage source 81 is shown that is connectedto the momentary supply contacts of the devices. If current sources areused instead, there are two possibilities. A single current source canbe connected with its positive supply terminal to both positive supplycontacts similar to the case of the voltage source. However, the currentsupply may also be split up in two parts, where a first part suppliesonly the first device (i.e. first Hall effect region 11 and second Halleffect region 12), and a second part supplies only the second device(i.e., third Hall effect region 13 and fourth Hall effect region 14).

The output signals may be voltages, which are tapped at the momentarysense contacts 23, 24, 27, 28 in the case of the first operating phase.However, electrical currents which are tapped between two contacts byshorting them via an amperemeter (or an electronic circuit whichrepresents an amperemeter having negligible input resistance andmeasuring the current flow through its input terminals) are alsopossible. Alternatively, a feedback circuit may be implemented that addscurrent at one of its input terminals of just the right amount to makethe potentials at both input terminals identical.

Accordingly, the electronic device may comprise a current source that isconnectable to the first momentary supply contact and the secondmomentary supply contact. An electronic device comprising four Halleffect regions 11 to 14 may comprise a current source having a positiveterminal and a negative terminal. The positive terminal of the currentsource may be connectable to the first momentary supply contact and thethird momentary supply contact. The negative terminal of the currentsource may be connectable to the second momentary supply contact and thefourth momentary supply contact. In an alternative embodiment, theelectronic device may comprise two current sources. A first currentsource may be connectable to the first momentary supply contact and thesecond momentary supply contact. A second current source may beconnectable to the third momentary supply contact and the fourthmomentary supply contact.

The amperemeter may be regarded as a current sensing device that isconnectable between the first momentary sense contact 23 and the thirdmomentary sense contact 27. The electrical current sensed by the currentsense device may then represent the signal between the first momentarysense contact 23 and the third momentary sense contact 27. The value ofthe electrical current or its variation may be indicative of themagnitude of the physical quantity or of its variation. The currentsensing device could also be connected in a similar manner as theamplifiers 61, 63, 71, and 73 in FIGS. 9A, 9B, and 10. For example, afirst current sensing device may connectable between the first momentarysense contact 23 and the third momentary sense contact 27 during thefirst operating phase. A second current sensing device may beconnectable between the second momentary sense contact 24 and the fourthmomentary sense contact 28 during the first operating phase. During thesecond operating phase, the first and second current sensing devices maybe connectable to the former supply contacts 21, and 25, and/or 22 and26.

The feedback circuit mentioned above may be connectable to the firstmomentary sense contact 23 and the second momentary sense contact 24.The feedback circuit may be configured to add an electrical current atone of its input terminals to make the electrical potentials at bothinput terminals identical (by using an operational amplifier, forexample). In an alternative embodiment, the feedback circuit may beconnectable to the first momentary sense contact 23 and the thirdmomentary sense contact 27. A further feedback circuit may beconnectable to the second momentary sense contact 24 and the fourthmomentary sense contact 28.

FIG. 11 shows two schematic top views of an electronic device accordingto a further embodiment of the teachings disclosed herein during a firstphase (top) and a second phase (bottom) of a measuring cycle. Theelectronic device 100 comprises four Hall effect regions 11, 12, 13, 14.The first and second Hall effect regions 11, 12 belong to a first basicelectronic device 10-1. The third and fourth Hall effect regions 13, 14belong to a second basic electronic device 10-2. Correspondingcross-sectional views can be readily derived from the schematic planviews in FIG. 11 in an analogous manner as in FIG. 3A. The configurationshown in FIG. 11 is substantially similar to the configuration shown inFIG. 9A. As a difference, the four Hall effect regions 11 to 14 arearranged along a line in the configuration of FIG. 11, whereas in FIG.9A the four Hall effect regions 11 to 14 are arranged in 2×2 array. Notshown in FIG. 11 is the voltage supply 81, the first amplifier 61, andthe second amplifier 63.

An output signal of the electronic device shown in FIG. 11 is determinedon the basis of a first electrical potential within the first basicelectronic device 10-1 (for example, at the momentary sense contact 23during the first operating phase), and a second electrical potentialwithin the second basic electronic device 10-2 (for example at themomentary sense contact 27) during the first operating phase.Furthermore, an electrical potential at the momentary sense contact 24of the second Hall effect region 12 and an electrical potential at themomentary sense contact 28 at the fourth Hall effect region 14 may alsocontribute to the output signal of the electronic device shown in FIG.11 during the first operating phase.

During the second operating phase illustrated in the lower part of FIG.11, the output signal of the electronic device 100 is based on theelectrical potentials at the momentary sense contacts 21, 22, 25, and 26(which have been momentary supply contacts during the first operatingphase). A first differential signal is determined between the momentarysense contacts 21 and 25. A second differential signal is determinedbetween the momentary sense contacts 22 and 26. The configuration shownin FIG. 11 may be regarded as a longitudinal configuration.Alternatively, it is also possible to connect the connection 42 to theconnection 44.

FIG. 12 shows a schematic plan view of an electronic device 100according to an embodiment of the teachings disclosed herein with fourHall effect regions 11 to 14 arranged in a line, i.e. a longitudinalconfiguration. The corresponding cross section can be readily derivedfrom the schematic plan view of FIG. 12 in an analogous manner as inFIG. 3A. FIG. 12 shows the configuration during the first clock phase ofthe spinning current cycle or measuring cycle. The configuration may bedescribed as follows in condensed form. Both Hall effect regions thatare interconnected to each other either by means of the connection 42 orthe connection 44 are lined up on a single axis. Furthermore, both pairsof Hall effect regions (i.e., both basic electronic devices 10-1, 10-2)are also lined up on the same axis. The first basic electronic device10-1 comprising the Hall effect regions 11 and 12 is substantiallyidentical to the pair of Hall effect regions 11, 12 shown in FIG. 9A.Two differential sense signals, in particular two differential voltagesmay be measured. A first differential voltage is between i) themomentary sense contact 23 formed at the surface of the first Halleffect region 11 of the first basic electronic device 10-1 and ii) themomentary sense contact 27 formed at the surface of the third Halleffect region 13 of the second basic electronic device 10-2. Hence, thedifferential voltage is measured in a basic electronic device-spanningmanner (which is also true for the configuration shown in FIG. 9A). Asecond differential voltage is measured between iii) the momentary sensecontact 24 formed at the surface of the second Hall effect region 12 ofthe first basic electronic device 10-1 and iv) the momentary sensecontact 28 formed at the surface of the fourth Hall effect region 14 ofthe second basic electronic device 10-2.

Depending on whether the two differential voltages P₂₃−P₂₇ and P₂₄−P₂₈are subtracted or added, the configuration shown in FIG. 12 does or doesnot markedly respond to a magnetic field in the z-direction, i.e., thedirection in the drawing plane that is perpendicular to the longitudinalaxis of the electronic device 100. At the sense contact 23 the potentialdecreases with increasing magnetic field in the z-direction, whereas thepotential at the sense contact 27 increases. At the sense contact 24 thepotential increases with increasing magnetic field and at the sensecontact 28 the potential decreases. When the two differential voltagesP₂₃−P₂₇ and P₂₄−P₂₈ are subtracted, the structure shown in FIG. 12 iscapable of sensing mechanical stress within the semiconductor crystal inwhich the structure is formed. Furthermore, by reversing the polarity ofthe power supply at one of the pairs of Hall effect regions only, theelectronic device may be configured to measure either the magnetic fieldor the mechanical stress. An electronic device as disclosed herein thusalso encompasses a mechanical stress sensor. Features that are claimedand/or described in connection with the electronic device for sensing amagnetic field are typically also applicable to the mechanical stresssensor, provided that the above mentioned condition regarding thepolarity of the power supply is fulfilled.

The four tubs 11 to 14 may be arranged in a single line as in FIG. 12,yet they may also be arranged in a 2×2-array as shown in FIGS. 13 to 15.The drawings in FIGS. 13 to 15 show the plan views of the variouselectronic devices in their configurations during operating phase 1; inphase 2 one simply has to exchange momentary supply terminals withmomentary sense terminals. All arrangements shown in FIGS. 13 to 15 aresubstantially equivalent with respect to the Hall signal, yet they aredifferent with respect to thermal-electric and piezoelectricdisturbances. These arrangements shown in FIGS. 13 to 15 are generatedby mere translations of the tubs from the configuration of FIG. 12—norotation or mirror symmetric placement has been performed.

There are many ways to arrange the Hall effect regions or tubs 11, 12,13, and 14 in the layout. For example, they can be arranged along asingle line or along a single column. They could also be arranged in aninterdigitated way, an interleaved way, or in a quadrangle, where thefirst basic device 10-1 comprises Hall effect regions in the first andthird quadrant (=minor diagonal) and where the second basic device 10-2is located on the main diagonal (Hall effect regions in the second andfourth quadrant).

It is even possible to rotate one tub of a device against the secondtub. Then the first sense contact renders a signal proportional to afirst in-plane component of the magnetic field and the second sensecontact renders a signal proportional to a second in-plane component ofthe magnetic field which is rotated by the same amount as the second tubis rotated with respect to the first tub.

Moreover, both tubs of the first device may be positioned parallel to afirst direction while the tubs of the second device may be positionedparallel to a second direction. FIGS. 13 to 15 described hereinafterillustrate some possible configurations of the device 100.

FIG. 13 shows a schematic plan view of an electronic device 100according to an embodiment with four Hall effect regions arranged in aquadrangle. A corresponding cross-section can be readily derived fromthe schematic plan view of FIG. 13 in an analogous manner as in FIG. 3A.The configuration shown in FIG. 13 may be regarded as a lateralconfiguration. The first basic electronic device 10-1 comprises two tubs11, 12 that are arranged on a line. The second basic electronic device10-2 comprises two further tubs 13, 14 that are arranged on a furtherline parallel to the line of the first basic electronic device. The tubs11 and 13 are substantially aligned to each other in a directionperpendicular to the above mentioned line and the further line.Likewise, the tubs 12 and 14 are substantially aligned to each other inthe direction perpendicular to the line and the further line. A firstdifferential voltage is tapped between the aligned tubs 11 and 13, inparticular the sense contact 23 of the first basic electronic device10-1 and a sense contact 27 of the second basic electronic device 10-2.A second differential voltage is tapped between the aligned tubs 12 and14, in particular between the sense contact 24 of the first basicelectronic device 10-1 and the sense contact 28 of the second basicelectronic device 10-2. The differential voltages are measured in abasic electronic device-spanning manner.

FIG. 14 shows a schematic plan view of an electronic device 100according to another embodiment with four Hall effect regions arrangedin a quadrangle. A corresponding cross-section can be readily derivedfrom the schematic plan view of FIG. 14 in an analogous manner as inFIG. 3A. The configuration shown in FIG. 14 may be regarded as a lateralconfiguration. The embodiment shown in FIG. 14 is similar to theembodiment shown in FIG. 13 with the following differences: In thesecond basic electronic device 10-2, the polarity of the supply contactsis inversed and the differential voltages are tapped diagonally betweenthe first tub 11 of the first basic electronic device 10-1 and thesecond tub 14 of the second basic electronic device 10-2, as well asbetween the second tub 12 of the first basic electronic device 10-1 andthe first tub 13 of the second basic electronic device 10-2. Thedifferential voltages are measured in a basic electronic device-spanningmanner.

FIG. 15 shows a schematic plan view of an electronic device 100according to an embodiment with four Hall effect regions 11 to 14arranged in a quadrangle and with diagonal interconnection structures. Acorresponding cross-section can be readily derived from the schematicplan view of FIG. 15 in an analogous manner as in FIG. 3A. Theconfiguration shown in FIG. 15 may be regarded as a diagonally offsetconfiguration. The first basic electronic device 10-1 forms a diagonalinterconnection structure and comprises the upper left tub 11 and thelower right tub 12. The second basic electronic device 10-2 formsanother diagonal interconnection structure and comprises the upper righttub 13 and the lower left tub 14. The differential voltages are measuredin a basic electronic device-spanning manner. The second Hall effectregion 12 is longitudinally and laterally offset with respect to thefirst Hall effect region 11. Regarding the second basic electronicdevice 10-2, the Hall effect region 14 is longitudinally and laterallyoffset with respect to the Hall effect region 13.

According to the basic electronic device 10 having only a single pair ofHall effect regions, the first and second Hall effect regions 11, 12 maybe disposed side by side, or laterally offset. Accordingly, the firstend of the first Hall effect region and the second end of the secondHall effect region may be adjacent, and vice versa. Typically, the firstand second Hall effect regions 11, 12 are elongate and have alongitudinal axis. In a side by side arrangement of the first and secondHall effect regions 11, 12, the second Hall effect region 12 issubstantially translated with respect to the first Hall effect region 11in a direction perpendicular to the longitudinal axis of the first Halleffect region 11 and parallel to the surface thereof.

FIG. 16 shows a schematic plan view of an electronic device 100according to a further embodiment. Depending on whether the twodifferential voltages are added or subtracted the electronic device 100is responsive to mechanical stress within the semiconductor crystal inwhich the Hall effect regions are formed or responsive to a magneticfield. A corresponding cross-section can be readily derived from theschematic plan view of FIG. 16 in an analogous manner as in FIG. 3A. Theelectronic device 100 comprises two basic electronic devices 10-1, 10-2having collectively four Hall effect regions 11 to 14 arranged in aquadrangle. This embodiment has some features in common with theembodiment shown in FIG. 10. Note that even when the electronic device100 is configured to function as a mechanical stress sensor, a magneticfield may influence the electric potentials at the momentary sensecontacts due to the Hall effect. However, the Hall effect-relatedportions of the electric potentials substantially cancel each other outwhen an output signal is determined on the basis of the electricpotentials at the momentary sense contacts. Thus, the magnetic fielddoes not, or only negligibly, influence said output signal. Instead, theoutput signal is mostly a function of the mechanical stress within thesemiconductor crystal. In this manner, the influence of the Hall effectand of a magnetic field in the output signal of a mechanical stresssensor may be reduced. For this reason, the Hall effect regions 11 to 14which are responsive to a vertical Hall effect have the effect ofsubstantially cancelling out an influence of a magnetic field on theoutput signal of the mechanical stress sensor. In an analogous mannerthe influence of a mechanical stress substantially cancels out, when theelectronic device 100 is configured to function as a magnetic fieldsensor, i.e. when the two differential voltages are subtracted from eachother.

It is also possible to arrange the four tubs 11 to 14 in a single columnand there are also several combinations of sequential order (from top tobottom).

FIG. 17 shows a schematic plan view of an electronic device 10 accordingto an embodiment with four Hall effect regions 11 to 14. A correspondingcross-section can be readily derived from the schematic plan view ofFIG. 17 in an analogous manner as in FIG. 3A. The configuration shown inFIG. 17 may be regarded as an angled configuration. The two Hall effectregions 11 and 12 are arranged on the same line and belong to a firstbasic electronic device 10-1. The two Hall effect regions 13 and 14 arearranged on another, non-parallel line and belong to a second basicelectronic device 10-2. In particular, the Hall effect regions 13, 14 ofthe second basic electronic 10-2 device are arranged at an angle of 90degrees (other angles are possible) with respect to the Hall effectregions 11, 12 of the first basic electronic device 10-1. Twodifferential voltages are measured in a basic electronic device-spanningmanner. Typically, the output signals are linear combinations of bothmagnetic field components parallel to the surface of the die. Thecoefficients of these linear combinations depend on the angle betweenthe lines along which both basic electronic devices 10-1, 10-2 arearranged. The differential voltage between the sense contacts 23 and 27is proportional to (Bz−Bx). The other differential voltage between sensecontacts 24 and 28 is proportional to (Bx−Bz). Hence, the sum of bothdifferential voltages is independent from the magnetic field. Thedifference of the differential voltages is proportional to 2*(Bx−Bz) andhence a magnetic field signal.

FIG. 18 shows a schematic plan view (top view) of an electronic device100 according to an embodiment with four Hall effect regions 11 to 14similar to the embodiment shown in FIG. 17, i.e. an angledconfiguration. However, the spinning current contacts of the secondbasic electronic device 10-2 in FIG. 18 have different functions duringthe first clock phase than in FIG. 17. In particular, the supplycontacts in the second basic electronic device 10-2 are, during thefirst operating phase of the spinning current scheme, the uppermostcontacts in the respective Hall effect region 13, 14. A firstdifferential voltage U1 is measured between a momentary sense contact ofthe first tub 11 of the first basic electronic device 10-1 and amomentary sense contact of the first tub 13 of the second basicelectronic device 10-2. A second differential voltage U2 is measuredbetween a sense contact of the second tub 12 of the first basicelectronic device 10-1 and a sense contact of the second tub 14 of thesecond basic electronic device 10-2. The first differential voltage U1is proportional to −Bx+Bz, i.e. a first linear combination of themagnetic field components in the x-direction and in the z-direction. Thesecond differential voltage U2 is proportional to Bx−Bz, i.e. a secondlinear combination of the magnetic field components in the x-directionand in the z-direction. Note that U2 is substantially equal to theinverse of U1, i.e., U2=−U1 (when inaccuracies are neglected). Acorresponding cross-section can be readily derived from the schematicplan view of FIG. 18 in an analogous manner as in FIG. 3A.

FIG. 19 shows a schematic top view of an electronic device 100 accordingto an embodiment, wherein each basic electronic device 10-1, 10-2comprises two Hall effect regions disposed at an angle of 90 degrees(other angles are possible) to each other. Hence, this embodiment usesan arrangement, where the two tubs of each basic electronic device 10-1,10-2 are rotated against each other by e.g. 90 degrees in the layout.Two differential voltages U1 and U2 may be measured. In the casedepicted in FIG. 19, the first differential voltage U1 is measuredbetween the tub 11 belonging to the first basic electronic device 10-1and the tub 13 belonging to the second electronic device 10-2. Thesecond differential voltage U2 is measured between the tub 12 belongingto the first basic electronic device 10-1 and the tub 14 belonging tothe second basic electronic device 10-2. The first differential voltageU1 is proportional to the term 2Bz. The second differential voltage isproportional to the term 2Bx. A corresponding cross-section can bereadily derived from the schematic plan view of FIG. 19 in an analogousmanner as in FIG. 3A.

The second basic electronic device 10-2 may also be rotated as a wholeagainst the first basic electronic device 10-1 by some angle: then U2 isnot proportional to 2Bx but some linear combination of the magneticfield components Bx and Bz, depending on the exact angular position ofthe second basic electronic device 10-2 with respect to the first basicelectronic device 10-1. Having several arrangements like this atdifferent angular positions, the system can reconstruct Bx and Bz byproper linear combinations of the signals delivered by these systems.For all these arrangements it is possible to shift the position of eachtub as a pure translation, in order to arrange them in columns or linesor even in an interdigital arrangement. This may improve matching andreduce errors due to thermo-electric voltages.

Note that the output signals may be in voltage domain (as given in FIGS.18 and 19, such as U1, U2, . . . )—however, one may also short the sensepins and measure the short circuit currents I1, I2, . . . which carriesthe same information as the voltage, according to U1=Ri1*I1, U2=Ri2*I2,. . . with Ri1, Ri2 denoting the internal resistances of the devices inthe respective electrical configurations. If the current-voltagecharacteristics of the devices (at zero magnetic field) are linear, U1and I1 correspond to each other and give the same residual offset over afull spinning current cycle. Yet, if the current-voltage characteristicsof the devices are nonlinear, the residual offset of the signals incurrent domain should typically be more accurate than in voltage domain.

FIG. 20 shows a schematic plan view of an electronic device 10 accordingto an embodiment comprising four Hall effect regions 11 to 14 arrangedin a quadrangle. A corresponding cross-section can be readily derivedfrom the schematic plan view of FIG. 20 in an analogous manner as inFIG. 3A. Regarding the arrangement of the first and second basicelectronic devices 10-1, 10-2, the embodiment shown in FIG. 20 has alongitudinal configuration because the right basic electronic device10-1 is provided in an extension of the longitudinal axis of the left(first) basic electronic device 10-2. A first basic electronic device10-1 comprises the tubs 11 and 12 which are laterally displaced withrespect to each other. A second basic electronic device 10-2 comprisesthe tubs 13 and 14 which are also laterally displaced with respect toeach other. The two basic electronic devices 10-1, 10-2 are arranged ona line extending along a longitudinal direction of the four tubs 11 to14, i.e. the two basic electronic devices 10-1, 10-2 structures arealigned in the longitudinal direction of the four tubs 11 to 14. Theembodiment of FIG. 20 may be briefly described as follows: Both tubs ofeach basic electronic device 10-1, 10-2 are parallel to each other buton different lines and both basic electronic devices 10-1, 10-2 are nextto each other. A more elaborate description of the embodiment shown inFIG. 20 reveals that the electronic device 100 comprises a first Halleffect region 11, a second Hall effect region 12, a third Hall effectregion 13, and a fourth Hall effect region 14 that are isolated fromeach other. Each Hall effect region 11 to 14 comprises a momentarysupply contact, a momentary sense contact, and an interconnectioncontact in or on surfaces of the respective Hall effect region 11 to 14.The interconnection contact 33 of the second Hall effect region 12 isconnected to the interconnection contact 32 of the first Hall effectregion 11. In a similar manner the interconnection contact 37 of thefourth Hall effect region 14 is connected to the interconnection contact36 of the third Hall effect region 13. A first differential sense signalis tapped between the sense contacts 23 and 27 of the first and thirdHall effect regions 11 and 13, respectively, and a second differentialsense signal is tapped between the sense contacts 24 and 28 of thesecond and fourth Hall effect regions 12 and 14, respectively.

FIG. 21 shows a schematic plan view of an electronic device 100according to an embodiment comprising four Hall effect regions 11 to 14arranged in a column. A corresponding cross-section can be readilyderived from the schematic plan view of FIG. 21 in an analogous manneras in FIG. 3A. A first basic electronic device 10-1 comprises the Halleffect regions 11 and 12. A second basic electronic device 10-2comprises the Hall effect regions 13 and 14. The second basic electronicdevice 10-2 is arranged laterally displaced with respect to the firstbasic electronic device 10-1. Two differential signals are tapped in abasic electronic device-spanning manner. The first differential signalis measured between the momentary sense contact 23 at the first tub 11of the first basic electronic device 10-1 (upper basic electronic device10-1 in FIG. 21) and the sense contact 27 at the first tub 13 of thesecond basic electronic device 10-2 (lower basic electronic device inFIG. 21). The second differential signal is measured between the sensecontact 24 at the second tub 12 of the first basic electronic device10-1 and the sense contact 28 of the second tub of the second basicelectronic device 10-2.

FIG. 22 shows a schematic plan view of an electronic device 100according to another embodiment comprising four Hall effect regionsarranged in a column wherein the basic electronic device 10-1, 10-2 areinterleaved or concentric with respect to each other, i.e. a concentricconfiguration. A corresponding cross-section can be readily derived fromthe schematic plan view of FIG. 22 in an analogous manner as in FIG. 3A.A first basic electronic device 10-1 comprises the tubs 11 and 12 and asecond basic electronic device 10-2 comprises the tubs 13 and 14. Thefirst basic electronic device 10-1 is an outer device which surroundsthe inner, second basic electronic device 10-2. A first differentialsignal is measured between a momentary sense contact 23 at the first tub11 of the outer, first basic electronic device 10-1 and the sensecontact 27 at the first tub 13 of the inner, second basic electronicdevice 10-2. The second differential signal is measured between themomentary sense contact 24 at the second tub 12 of the outer, firstbasic electronic device 10-1 and the sense contact 28 of the second tubof the inner, second basic electronic device 10-2.

FIG. 23 shows a schematic plan view of an electronic device 10 accordingto yet another possible embodiment of the teachings disclosed herein.The Hall effect regions 11 and 12 are L-shaped and the interconnectioncontacts 32 and 33 are located in the corner of the L-shaped first Halleffect region 11 and second Hall effect region 12, respectively. Theinterconnection contact 32 is in the symmetry center of the firstcontact 21 and the third contact 23. A distance between the firstcontact 21 and the interconnection contact (second contact) 32 issubstantially equal to a distance between the second contact 32 and thethird contact 23. Likewise, the interconnection contact 33 is in thesymmetry center of the first contact 22 and the third contact 24, andthe distance between the first contact 22 and the interconnectioncontact (second contact) 33 is substantially equal to a distance betweenthe second contact 33 and the third contact 24.

FIG. 24 shows a schematic plan view of an electronic device 10 accordingto a further embodiment of the teachings disclosed herein. The Halleffect regions 11 and 12 are arc-shaped. Reference is made to thecomments made above in the context of the description of FIG. 23regarding the contacts 21, 32, 22 and 22, 33, 24. The arc-shaped Halleffect regions 11, 12 may extend over an arbitrary angle, such as 45degrees, 60 degrees, 90 degrees, 120 degrees.

FIG. 25 shows a schematic flow diagram of a sensing method for aphysical quantity. At a step 202 a power supply is connected between afirst momentary supply contact formed in or on the surface of a firstHall effect region and a second momentary supply contact formed in or onthe surface of a second Hall effect region. The first Hall effect regionand the second Hall effect region are connected to each other by meansof a connection so that an electrical current provided by the powersupply flows via the first momentary supply contact, at least a portionof the first Hall effect region, the connection, at least a portion ofthe second Hall effect region, and the second momentary supply contactback to the power supply.

Sense signals are then sensed at a first momentary sense contact formedin or on the surface of the first Hall effect region and at a secondmomentary sense contact formed in or on a surface of the second Halleffect region (step 204). A first interconnection contact is formed inor on the surface of the first Hall effect region between the firstmomentary supply contact and the first momentary sense contact. A secondinterconnection contact is formed in or on the surface of the secondHall effect region between the second momentary supply contact and thesecond momentary sense contact. The first and second interconnectioncontacts are connected to each other by means of the connection.

At a step 206 the momentary functions of the first momentary supplycontact and of the first momentary sense contact are swapped.Furthermore, the momentary functions of the second momentary supplycontact and of the second momentary sense contact are swapped so thatthe power supply is connected between a former first sense contact and aformer second sense contact.

At a step 208 sense signals at a former first supply contact and aformer second supply contact are sensed. An output signal is thendetermined during a step 210 on the basis of the sense signals at thefirst momentary sense contact, the second momentary sense contact, theformer first supply contact and the former second supply contact.

The sensing method may be extended when the electronic device comprisesa first basic electronic device 10-1 and a second basic electronicdevice 10-2, as depicted, for example, in FIGS. 9A to 22. The first Halleffect region and the second Hall effect region, their correspondingcontacts and the connection form the first electronic device 10-1. Athird Hall effect region, a fourth Hall effect region, correspondingcontacts and a second connection form a second electronic device similar10-2 to the first electronic device. According to an embodiment of theteachings disclosed herein, the extended sensing method may furthercomprise connecting the power supply or another power supply between afirst momentary supply contact and a second momentary supply contact ofthe second electronic device. A sense signal may then be sensed at afirst momentary sense contact of the second electronic device.Subsequently, the function of the first momentary sense contact of thesecond electronic device and the first momentary supply contact of thesecond electronic device are swapped so that the electrical current isprovided via a former sense contact of the second electronic device. Themethod then continues with sensing a sense signal at a former firstsupply contact of the second electronic device. The determination of theoutput signal further takes into account the sense signals at the firstmomentary sense contact of the second electronic device and at theformer first supply contact of the second electronic device.

It is also possible that a differential signal is determined as adifference between the sense signals at the first momentary sensecontact of the first electronic device and the first momentary sensecontact of the second electronic device. A second differential signalmay be determined as a difference between the sense signals at theformer first supply contact of the first electronic device and theformer first supply contact of the second electronic device. Finally,the output signal may be determined on the basis of the firstdifferential signal and the second differential signal.

The sensing method may be a magnetic sensing method for sensing amagnetic field using the Hall effect.

Alternatively, the sensing method may be a mechanical stress sensingmethod, wherein directions of an electrical current flow within thefirst and second Hall effect regions are chosen so that a Hall effectoccurring in the first Hall effect region and a Hall effect occurring inthe second Hall effect region are responsible for substantiallycanceling an influence of a magnetic field on the output signal when theoutput signal is determined by means of a linear combination of thesense signals observed at the momentary sense contacts of the first Halleffect region and the second Hall effect region. The cancellation of theinfluence of the magnetic field works particularly well if the magneticfield is substantially equal in the various Hall effect regions.

FIG. 26 shows a schematic flow diagram of another sensing methodaccording to an embodiment of the teachings disclosed herein. At a step212 a power supply is connected between a first momentary supply contactformed in or on the surface of a first Hall effect region and a secondmomentary supply contact formed in or on the surface of a second Halleffect region. The first Hall effect region and the second Hall effectregion are connected in series by means of a first interior contactarranged in or on the surface of the first Hall effect region and asecond interior contact arranged in or on the surface of the second Halleffect region.

At a step 214 sense signals are acquired at a first momentary sensecontact formed in or on the surface of the first Hall effect region andat a second momentary sense contact formed in or on a surface of thesecond Hall effect region. The first momentary supply contact and thefirst momentary sense contact are arranged on two sides of the firstinterior contact and wherein the second momentary supply contact and thesecond momentary sense contact are arranged on two sides of the secondinterior contact.

The momentary functions of the first momentary supply contact and thefirst momentary sense contact are swapped during a step 216. Themomentary functions of the second momentary supply contact and thesecond momentary sense contact are also swapped during the step 216 sothat the power supply is connected between a former first sense contactand a former second sense contact.

At a step 218, sense signals are acquired at a former first supplycontact and a former second supply contact. An output signal is thendetermined at a step 220 on the basis of the sense signals at the firstmomentary sense contact, the second momentary sense contact, the formerfirst supply contact and the former second supply contact.

Although some aspects have been described in the context of anapparatus, it is clear that these aspects also represent a descriptionof the corresponding method, where a block or device corresponds to amethod step or a feature of a method step. Analogously, aspectsdescribed in the context of a method step also represent a descriptionof a corresponding block or item or feature of a correspondingapparatus. Some or all of the method steps may be executed by (or using)a hardware apparatus, like for example, a microprocessor, a programmablecomputer or an electronic circuit. In some embodiments, some one or moreof the most important method steps may be executed by such an apparatus.

The above described embodiments are merely illustrative for theprinciples of the present invention. It is understood that modificationsand variations of the arrangements and the details described herein willbe apparent to others skilled in the art. It is the intent, therefore,to be limited only by the scope of the impending patent claims and notby the specific details presented by way of description and explanationof the embodiments herein.

The invention claimed is:
 1. An electronic device comprising: a Halleffect region; a first contact arranged in or on a surface of the Halleffect region, and configured to function at least temporarily as afirst supply contact for the Hall effect region; a second contactarranged in or on the surface of the Hall effect region, the secondcontact being a second supply contact for the Hall effect region; and athird contact arranged in or on the surface of the Hall effect region,and configured to function at least temporarily as a sense contact;wherein the first contact and the third contact are arranged in asubstantially symmetrical manner to each other with respect to thesecond contact, wherein an electrical current distribution within theHall effect region is influenced by a physical quantity to be measured,and wherein a sense signal tapped at the third contact is a function ofthe current distribution, the sense signal thus being indicative of thephysical quantity.
 2. The electronic device according to claim 1,wherein the first contact and the third contact are configured toalternately function as a first momentary supply contact and a firstmomentary sense contact.
 3. The electronic device according to claim 1,wherein the Hall effect region is a first Hall effect region; whereinthe first contact and the third contact form a first pair of contactsthat are configured to alternately function as a first momentary supplycontact and a first momentary sense contact arranged in or on a surfaceof the first Hall effect region; wherein the second contact is a firstinterconnection contact arranged in or on the surface of the first Halleffect region; the electronic device further comprising: a second Halleffect region; a second pair of contacts that are configured toalternately function as a second momentary supply contact and a secondmomentary sense contact arranged in or on a surface of the second Halleffect region; a second interconnection contact arranged in or on thesurface of the second Hall effect region; and a connection configured toconnect the first interconnection contact and the second interconnectioncontact so that an electrical current supplied to the electronic devicevia the first momentary supply contact of the first pair of contacts andleaving the electronic device via the second momentary supply contact ofthe second pair of contacts is conducted via the connection from thefirst Hall effect region to the second Hall effect region; wherein asense signal tapped at at least one of the first momentary sense contactand the second momentary sense contact is a function of the currentdistribution, the sense signal thus being indicative of the physicalquantity.
 4. The electronic device according to claim 3, wherein thefirst interconnection contact is arranged between the first pair ofcontacts and wherein the second interconnection contact is arrangedbetween the second pair of contacts.
 5. The electronic device accordingto claim 3, wherein the first interconnection contact is arrangedbetween the first momentary supply contact and the first momentary sensecontact so that a spacing between the first momentary supply contact andthe first interconnection contact is substantially equal to a spacingbetween the first interconnection contact and the first momentary sensecontact; and wherein the second interconnection contact is arrangedbetween the momentary second supply contact and the momentary sensecontact so that a spacing between the second momentary supply contactand the second interconnection contact is substantially equal to aspacing between the second interconnection contact and the secondmomentary sense contact.
 6. The electronic device according to claim 5,wherein the first pair of contacts and the first interconnection contactare substantially arranged along a line in or on the surface of thefirst Hall effect region; and wherein the second pair of contacts andthe second interconnection contact are substantially arranged along aline in or on the surface of the second Hall effect region.
 7. Theelectronic device according to claim 3, wherein at least one of thefirst pair of contacts and the second pair of contacts is configured forutilization in a spinning current scheme with at least two clock phases,where all sense contacts of a first clock phase are used as supplycontacts in a second clock phase and all supply contacts of a firstclock phase are used as sense contacts in a second clock phase, and thesense signals of both clock phases are combined to give a total signalthat is indicative of the physical quantity.
 8. The electronic deviceaccording to claim 3, further comprising a third Hall effect region; athird pair of contacts that are configured to alternately function as athird momentary supply contact and a third momentary sense contactarranged in or on a surface of the third Hall effect region; a thirdinterconnection contact arranged in or on the surface of the third Halleffect region; a fourth Hall effect region; a fourth pair of contactsthat are configured to alternately function as a fourth momentary supplycontact and a fourth momentary sense contact arranged in or on a surfaceof the fourth Hall effect region; a fourth interconnection contactarranged in or on the surface of the second Hall effect region; and afurther connection configured to connect the third interconnectioncontact and the fourth interconnection contact so that a furtherelectrical current supplied to the electronic device via the thirdmomentary supply contact and leaving the electronic device via thefourth momentary contact is conducted via the further connection fromthe third Hall effect region to the fourth Hall effect region.
 9. Theelectronic device according to claim 8, further comprising a firstsignal extraction circuit configured to provide a first signal on thebasis of a first sense signal and a third sense signal, the first sensesignal being tapped at the first momentary sense contact and the thirdsense signal being tapped at the third momentary sense contact; and asecond signal extraction circuit configured to provide a second signalon the basis of a second sense signal and a fourth sense signal, thesecond sense signal being tapped at the second momentary contact and thefourth sense signal being tapped at the fourth momentary sense contact.10. The electronic device according to claim 8, wherein the firstinterconnection contact is located between the first momentary supplycontact and the first momentary sense contact; wherein the thirdinterconnection contact is located between the third momentary supplycontact and the third momentary sense contact, the third momentarysupply contact and the third momentary sense contact being arranged withrespect to the third interconnection contact in a mirrored mannercompared to the arrangement of the first momentary supply contact andthe first momentary sense contact with respect to the firstinterconnection contact; wherein the second interconnection contact islocated between the second momentary supply contact and the secondmomentary sense contact; and wherein the fourth interconnection contactis located between the fourth momentary supply contact and the fourthmomentary sense contact, the fourth momentary supply contact and thefourth momentary sense contact being arranged with respect to the fourthinterconnection contact in a mirrored manner compared to the arrangementof the second momentary supply contact and the second momentary sensecontact with respect to the second interconnection contact.
 11. Theelectronic device according to claim 8, wherein the firstinterconnection contact is located between the first momentary supplycontact and the first momentary sense contact; wherein the thirdinterconnection contact is located between the third momentary supplycontact and the third momentary sense contact in an arrangementsubstantially alike to the arrangement of the first momentary supplycontact and the first momentary sense contact with respect to the firstinterconnection contact; wherein the second interconnection contact islocated between the second momentary supply contact and the secondmomentary sense contact; and wherein the fourth interconnection contactis located between the fourth momentary supply contact and the fourthmomentary sense contact in an arrangement substantially alike to thearrangement of the second momentary supply contact and the secondmomentary sense contact with respect to the second interconnectioncontact.
 12. The electronic device according to claim 8, furthercomprising a feedback circuit selectively connected to the firstmomentary sense contact and the third momentary sense contact, thefeedback circuit being configured to add an electrical current at one ofits input terminals to make the electrical potentials at both inputterminals substantially identical.
 13. The electronic device accordingto claim 8, wherein the first Hall effect region, the second Hall effectregion, the third Hall effect region, and the fourth Hall effect regionare arranged along a single line, along a single column, in aninterdigitated manner, or in an interleaved manner.
 14. The electronicdevice according to claim 8, wherein the first Hall effect region, thesecond Hall effect region, the third Hall effect region, and the fourthHall effect region are arranged in a quadrangle, wherein the first Halleffect region and the second Hall effect region are arranged in a firstquadrant and a third quadrant, respectively, and wherein the third Halleffect region and the fourth Hall effect region are located in a secondquadrant and a fourth quadrant, respectively.
 15. The electronic deviceaccording to claim 8, wherein the first Hall effect region and thesecond Hall effect region are arranged along a first direction andwherein the third Hall effect region and the fourth Hall effect regionare arranged along a second direction defining a non-zero angle with thefirst direction.
 16. The electronic device according to claim 8, furthercomprising a sense signal evaluator configured to be connected to themomentary sense contact of the first pair of contacts and to themomentary sense contact of the third pair of contacts, and furtherconfigured to process a differential sense signal that is based on bothsense signals provided at the first momentary sense contact and thethird momentary sense contact.
 17. The electronic device according toclaim 3, further comprising a current sensing device connectable to oneor both of the first momentary sense contact and the second momentarysense contact and wherein the electrical current sensed by the currentsense device represents the signal between the first momentary sensecontact and the second momentary sense contact, a variation of which isindicative of the magnitude of a variation of the physical quantity. 18.The electronic device according to claim 3, wherein the first Halleffect region and the second Hall effect region are disposed at anon-zero angle to each other.
 19. The electronic device according toclaim 3, wherein the electronic device is a Hall effect device sensitiveto a magnetic field parallel to the surfaces of the first Hall effectregion and the second Hall effect region and substantially perpendicularto a current flow direction of the electrical current within at leastone of the first Hall effect region and the second Hall effect region.20. The electronic device according to claim 3, wherein the electronicdevice is a mechanical stress sensor, and wherein the momentary sensecontacts of the first and second pairs of the contacts are arrangedrelative to the momentary supply contacts of the first and second pairsof contacts in a manner that an electrical current within the first Halleffect region passing by the first momentary sense contact hassubstantially the same direction as an electrical current within thesecond Hall effect region passing by the second momentary sense contact,whereby the mechanical stress sensor is sensitive to a mechanical stresswithin at least one of the first Hall effect region and the second Halleffect region.
 21. The electronic device according to claim 3, wherein,with respect to contacts of the first and second Hall effect regions,the first Hall effect region comprises just the first pair of contactsand the first interconnection contact, and wherein the second Halleffect region comprises just the second pair of contacts and the secondinterconnection contact.
 22. The electronic device according to claim 3,wherein the first interconnection contact is connected to the secondinterconnection contact of the second group so that the first Halleffect region and the second Hall effect region are connected in serieswith respect to the first momentary supply contact and the secondmomentary supply contact.
 23. An electronic device comprising: a Halleffect region; a first contact arranged in or on a surface of the Halleffect region and configured to at least temporarily function as asupply contact; a second contact arranged in or on the surface of theHall effect region and configured to function as a further supplycontact; and a third contact arranged in or on the surface of the Halleffect region configured to at least temporarily function as a sensecontact, the third contact being at a first distance from the firstcontact and at a second distance from the second contact; wherein adistance between the first contact and the second contact is smallerthan a maximum of the first distance and the second distance; andwherein an electrical current distribution within the Hall effect regionis influenced by a physical quantity to be measured and wherein a sensesignal tapped at the third contact is a function of the currentdistribution, the sense signal thus being indicative of the physicalquantity.
 24. A sensing method comprising: feeding an electric currentto a Hall effect region via a first contact arranged in or on a surfaceof a Hall effect region and withdrawing the electric current from theHall effect region via a second contact arranged in or on the surface ofthe Hall effect region; sensing a sense signal at a third contact formedin or on the surface of the Hall effect region, wherein the firstcontact and the third contact are arranged in a substantiallysymmetrical manner to each other with respect to the second contact, andwherein an electrical current distribution within the Hall effect regionis influenced by a physical quantity to be measured and wherein a sensesignal tapped at the third contact is a function of the currentdistribution, the sense signal thus being indicative of the physicalquantity; feeding the electric current or a further electric current tothe Hall effect region via the third contact and withdrawing theelectric current or the further electric current via the second contact,or vice versa; sensing a further sense signal at the first contact; anddetermining an output signal on the basis of the sense signal and thefurther sense signal.
 25. The sensing method according to claim 24,wherein the Hall effect region is a first Hall effect region; whereinthe second contact is connected, via a connection, to a second contactof a second Hall effect region; the method further comprising:connecting a power supply between the first contact of the first Halleffect region, functioning as a first momentary supply contact during afirst operating phase of the sensing method, and a second momentarysupply contact formed in or on the surface of the second Hall effectregion, so that the electrical current provided by the power supplyflows via the first momentary supply contact, at least a portion of thefirst Hall effect region, the connection, at least a portion of thesecond Hall effect region, and the second momentary supply contact;sensing sense signals at the third contact of the first Hall effectregion, functioning as a first momentary sense contact formed during thefirst operating phase, and at a second momentary sense contact formed inor on a surface of the second Hall effect region, wherein the secondcontact functions as a first interconnection contact and is formed in oron the surface of the first Hall effect region between the firstmomentary supply contact and the first momentary sense contact, whereina second interconnection contact is formed in or on the surface of thesecond Hall effect region between the second momentary supply contactand the second momentary sense contact, the first and secondinterconnection contacts being connected to each other by means of theconnection; swapping the momentary functions of the first momentarysupply contact and the first momentary sense contact and swapping themomentary functions of the second momentary supply contact and thesecond momentary sense contact so that the power supply is connectedbetween a former first sense contact and a former second sense contact;sensing sense signals at a former first supply contact and a formersecond supply contact; and determining the output signal on the basis ofthe sense signals at the first momentary sense contact, the secondmomentary sense contact, the former first supply contact and the formersecond supply contact.
 26. The sensing method according to claim 25,wherein the first Hall effect region and the second Hall effect region,their corresponding contacts and the connection form a first electronicdevice and wherein a third Hall effect region, a fourth effect Halleffect region, corresponding contacts and a second connection form asecond electronic device similar to the first electronic device, whereinthe sensing method further comprises: connecting the power supply oranother power supply between a first momentary supply contact and asecond momentary supply contact of the second electronic device; sensinga sense signal at a first momentary sense contact of the secondelectronic device; swapping the function of the first momentary sensecontact of the second electronic device and the first momentary supplycontact of the second electronic device so that the electrical currentis provided via a former sense contact of the second electronic device;and sensing a sense signal at a former first supply contact of thesecond electronic device; wherein determining the output signal furthertakes into account the sense signals at the first momentary sensecontact of the second electronic device and at the former first supplycontact of the second electronic device.
 27. The sensing methodaccording to claim 26, wherein determining the output signal comprises:determining a differential signal as a difference between the sensesignals at the first momentary sense contact of the first electronicdevice and the first momentary sense contact of the second electronicdevice; determining a second differential signal as a difference betweenthe sense signals at the former first supply contact of the firstelectronic device and the former first supply contact of the secondelectronic device; and determining the output signal on the basis of thefirst differential signal and the second differential signal.
 28. Thesensing method according to claim 25, wherein the sensing method is amagnetic sensing method for sensing a magnetic field using the Halleffect.
 29. The sensing method according to claim 25, wherein thesensing method is a mechanical stress sensing method, wherein directionsof an electrical current flow within the first and second Hall effectregions are chosen so that a Hall effect occurring in the first Halleffect region and a Hall effect occurring in the second Hall effectregion are responsible for substantially canceling an influence of amagnetic field on the output signal when the output signal is determinedby means of a linear combination of the sense signals observed at themomentary sense contacts of the first Hall effect region and the secondHall effect region.
 30. A sensing method comprising: feeding an electriccurrent to a Hall effect region via a first contact arranged in or on asurface of a Hall effect region and withdrawing the electric currentfrom the Hall effect region via a second contact arranged in or on thesurface of the Hall effect region; sensing a sense signal at a thirdcontact formed in or on the surface of the Hall effect region, whereinthe third contact is at a first distance from the first contact and at asecond distance from the second contact; wherein a distance between thefirst contact and the second contact is smaller than a maximum of thefirst distance and the second distance, and wherein an electricalcurrent distribution within the Hall effect region is influenced by aphysical quantity to be measured, and wherein a sense signal tapped atthe third contact is a function of the current distribution, the sensesignal thus being indicative of the physical quantity; feeding theelectric current or a further electric current to the Hall effect regionvia to the third contact and withdrawing the electric current or thefurther electric current via the second contact, or vice versa; sensinga further sense signal at the first contact; and determining an outputsignal on the basis of the sense signal and the further sense signal.31. The sensing method according to claim 30, wherein the Hall effectregion is a first Hall effect region, and wherein the second contact isconnected, via a connection, to a second contact of a second Hall effectregion; the method further comprising: connecting a power supply betweenthe first contact of the first Hall effect region, functioning as afirst momentary supply contact during a first operating phase of thesensing method, and a second momentary supply contact formed in or onthe surface of a second Hall effect region; sensing sense signals at thethird contact of the first Hall effect region, functioning as a firstmomentary sense contact during the first operating phase, and at asecond momentary sense contact formed in or on a surface of the secondHall effect region; swapping the momentary functions of the firstmomentary supply contact and the first momentary sense contact andswapping the momentary functions of the second momentary supply contactand the second momentary sense contact so that the power supply isconnected between a former first sense contact and a former second sensecontact; sensing sense signals at a former first supply contact and aformer second supply contact; and determining the output signal on thebasis of the sense signals at the first momentary sense contact, thesecond momentary sense contact, the former first supply contact and theformer second supply contact.